Hydride gases, such as phosphine and arsine, are important contaminants in process chemicals used in both the petrochemical and semiconductor industries. For example, the presence of phosphine, arsine, hydrogen sulfide and carbonyl sulfide in polymer grade ethylene or propylene can have a deleterious effect on catalysts used in the production of polypropylene plastics. Accurate data on the concentrations of these contaminants at trace levels enables prediction of catalyst lifetime and minimizes production downtime.In the semiconductor industry, phosphine is used as a precursor for the deposition of group III-V compound semiconductors, and as a dopant in the manufacturing of semiconductor devices, such as diodes and transistors. In the case of group III-V compound materials, such as indium phosphide (InP), absence of other hydride dopant impurities e.g., silane, germane or hydrogen sulfide (and moisture) is critical, as they can have a profound effect on the performance of the final device. In particular, incorporated sulfur from hydrogen sulfide and carbonyl sulfide may affect the electrical properties of Agilent 8800 串聯(lián)四極桿 ICP-MS