Evaporation is a powerful technique for thick metal or organic coatings. It is a vapor phase deposition technique and requires good vacuum. High temperatures must be reached to vaporize the material under vacuum to coat the substrate. Typically any material where evaporation temperature is less than 2000 0C can be evaporated at about 10-5 Torr for coating. However, appropriate crucibles (Alumina, Quartz, Boron Nitride etc) with proper baskets or boats must be chosen. Organic materials require lower temperatures (about 6000C) but better controlled.
Some materials have low sticking coefficient making it difficult to build a film or require substrate heating (optional) to control stoichiometry. These problems can be overcome by pressure and heating control. Having a computer-controlled system we can assure low background pressure is reached before evaporation can start. Especially at the beginning, impurities that outgas can be pumped down by heating the empty crucible or the boat.

In order to make the most effective use of your thin film deposition system; it is necessary to understand some of the basic parameters involved in creating thin films using the plasma source. Plasma deposition systems typically consist of a parallel plate configuration where the upper electrode is RF and the lower electrode is ground. Gas comes through the showerhead. In such configuration activating two species with substantially different activation energy is difficult, and both stoichiometry and thickness can not be uniform over large substrate areas. Here the secondary gas input line allows difficult to activate species to enter plasma from the source and easier to activate species are provided at a through the primary line of the source. Then best uniformity can be achieved by optimizing flows at different pressures.
 
It is imperative that a deep base pressure be achieved in order to get the adhesion and cleanliness necessary for high quality thin film deposition.  The lowest RF power at which discharge can be initiated depends on the type of gas used; however typically these pressures are around 0.1 Torr. RF power can be increased when auto tuning is capable of real time tuning with reflected powers in the range of 1% of total. At high powers, the plasma may display instabilities, which may be removed by increasing pressure. At lower pressures more uniform and diffused plasma can be obtained at lower power levels. Typical operational pressure range is 0.1 to 1 Torr, 100-200W. Below is a graph of the operating power limits for the plasma source. Any values in the shaded region should produce consistent plasma.
 
 
Uniformity of the deposition would be function of the flow rates, substrate temperature and the spacing between the electrodes. The substrate can be heated to a maximum 400C.
 
Biasing the platen can control ion acceleration energy through the plasma sheet. Plasma potential can also be affected by controlling electron loss through the plasma. Therefore, through biasing and heating, denser and harder films can be produced.

In order to make the most effective use of your thin film deposition system, it is necessary to understand some of the basic parameters involved in creating thin films. The deposition process can be broadly classified into physical vapor deposition ( PVD ) and chemical vapor deposition ( CVD ). In CVD , the film growth occurs at higher temperatures leading to the development of corrosive gaseous products and might leave impurities on the film. The PVD process can be performed at lower deposition temperatures also leaving corrosive products aside, but deposition rates are lower and it leaves residual compressive stress in the film. Electron beam physical vapor deposition, nevertheless, yields a high deposition rate from 0.1 μm / min to 10 μm / min at relatively low substrate temperatures, with very high material usage efficiency. Due to the very high deposition rate, this process has industrial applications for wear resistant and thermal barrier coatings in aerospace industries, hard coatings for cutting and tool industries, and electronic and optical films for semiconductor industries. In principle, solid evaporant such as powder, granules, lumps, or shaped plug, is placed in the source's copper hearth or in a hearth-liner. A high electron flux produced by hot filament positioned beneath the source is extracted and electro statically and magnetically bent/focused on the top of the evaporant. The electron beam's energy elevates the evaporant's surface temperature. Seldom is the beam rastered to increase the evaporation region. Since the evaporation region is enclosed by cooler (often solid) evaporant, unlike other thermal sources, the e-beam source's vapor plume is chiefly uncontaminated by crucible material. Production scale e-beam sources are usually single pocket (one hearth). Multipocket source (4 or 6 hearths) is available for R & D applications. A cover plate obscures the pockets "not-in-use" to prevent vapor cross talk. Multipocket sources are particularly convenient when depositing multilayer films on a single substrate.